First Name
Nisarg
Middle Name
A
Last Name
Raval
Email
nisargraval98@gmail.com
Affiliation
Saurashtra University
Address Line 1
Department of Physics, Saurashtra University, Rajkot - 360005, Gujarat, India
City
Rajkot
State / Province
Gujarat
Postal / Zip Code
360005
BTR Number
71365
Name of PI for above BTR
Prof. N.A. Shah
Title of the Proposal as per above BTR
Tuning on Electrical Properties through Field Effects for Manganite based n-n Junctions: Role of Swift Heavy Ion Irradiation
Name of Student and Guide
Nisarg Raval (Student)| Prof. N.A. Shah (Guide)
LEC if any
Dr. Ambuj Tripathi
Thickness Profilometry
Expected outcome of the measurements to be done
1. X-Ray Diffraction (XRD): -
The XRD measurements are supposed to give the structural information, especially the Orthorhombic phases to be observed in mixed valent Manganites and Hexagonal structure or Cubic structure in metal oxide materials, which may get modified after the irradiation of Heavy Ions. Also, the strain can be identified from the XRD which plays crucial role in device based applications of such thin films.
2. Scanning Probe Microscopy (AFM):
Irradiation induced modifications in the Manganite and metal oxide based thin films may result in the creation of defects. The variation/modifications in the surface may be identified by the Atomic Force Microscopy (AFM). The grain size could be varied depending on the fluence of the Irradiation and thickness of the films. It might have resulted in the creation of island-like and well-like structures.
3. Scanning Electron Microscopy (SEM + EDAX):
The electron microscopy study will give the idea about the grain shape and grain size of the polycrystalline matrix composite in bulk form which is very useful in understanding the charge transport mechanism inside the material and the EDAX will give the estimation of elements present in the area of interest and hence the composition of the compound can be validated.
4. Rutherford backscattering (RBS):
RBS will give the information about the elemental composition in quantitative manner. The Manganites and Metal Oxides having Oxygen, the content of Oxygen play a very important role in charge transport mechanism. RBS provides the information of the oxygen content varying along with the thickness of the films by simulating the data in the softwares like XRUMP and SIMNRA. Also, the depth profiling technique used in RBS will help to validate the thickness of the thin film required for purpose of device applications.
5. Thickness Profilometry: -
The thickness profilometry will give us the approximation of the thickness of the film in form of thickness vs scanning distance. Also, the thickness obtained from the depth profiling in the RBS spectra can be correlated with the thickness measured from the thickness profilometer.
6. Electrical Transport Measurements:
The transport properties (through temperature and magnetic field dependent R-T and I-V Characteristics) are proposed to give insulating/semiconducting behavior for the manganites based given stoichiometry and the metal oxides. The resistive switching behaviour can also be found in some cases of mixed valent manganite-based samples.
The XRD measurements are supposed to give the structural information, especially the Orthorhombic phases to be observed in mixed valent Manganites and Hexagonal structure or Cubic structure in metal oxide materials, which may get modified after the irradiation of Heavy Ions. Also, the strain can be identified from the XRD which plays crucial role in device based applications of such thin films.
2. Scanning Probe Microscopy (AFM):
Irradiation induced modifications in the Manganite and metal oxide based thin films may result in the creation of defects. The variation/modifications in the surface may be identified by the Atomic Force Microscopy (AFM). The grain size could be varied depending on the fluence of the Irradiation and thickness of the films. It might have resulted in the creation of island-like and well-like structures.
3. Scanning Electron Microscopy (SEM + EDAX):
The electron microscopy study will give the idea about the grain shape and grain size of the polycrystalline matrix composite in bulk form which is very useful in understanding the charge transport mechanism inside the material and the EDAX will give the estimation of elements present in the area of interest and hence the composition of the compound can be validated.
4. Rutherford backscattering (RBS):
RBS will give the information about the elemental composition in quantitative manner. The Manganites and Metal Oxides having Oxygen, the content of Oxygen play a very important role in charge transport mechanism. RBS provides the information of the oxygen content varying along with the thickness of the films by simulating the data in the softwares like XRUMP and SIMNRA. Also, the depth profiling technique used in RBS will help to validate the thickness of the thin film required for purpose of device applications.
5. Thickness Profilometry: -
The thickness profilometry will give us the approximation of the thickness of the film in form of thickness vs scanning distance. Also, the thickness obtained from the depth profiling in the RBS spectra can be correlated with the thickness measured from the thickness profilometer.
6. Electrical Transport Measurements:
The transport properties (through temperature and magnetic field dependent R-T and I-V Characteristics) are proposed to give insulating/semiconducting behavior for the manganites based given stoichiometry and the metal oxides. The resistive switching behaviour can also be found in some cases of mixed valent manganite-based samples.
Details of the Samples to be used
C100 to C203: 12 Thin Films;
LZ1, LZ2, LBZ1, LBZ2: 4 Thin Films
CLS to CLS13: 4 Thin Films
CGS to CGS13: 4 Thin Films
LSMO, LZ10 to LZ30, LBZ5 to LBZ15: 7 Bulk Pellets
Total Number of Samples = 24 (Films) + 7 (Pellets) = 31 Samples
LZ1, LZ2, LBZ1, LBZ2: 4 Thin Films
CLS to CLS13: 4 Thin Films
CGS to CGS13: 4 Thin Films
LSMO, LZ10 to LZ30, LBZ5 to LBZ15: 7 Bulk Pellets
Total Number of Samples = 24 (Films) + 7 (Pellets) = 31 Samples
Proposed Start Date
Proposed End Date
TA/DA Required
Yes
Accommodation Required
Yes
Have you used these facilities before for same BTR No
No
Past Uses of IUAC Facilities for same BTR No
Mobile Number
6353970416
Note: for Facilities Required