| 321 |
68312 |
68 |
3 |
LEIBF |
Sunil Chaki |
Study of the swift heavy ion induced modifications in SnS2xSe2(1-x) (0 ? x ? 1) alloys for Photocatalysis and Bio-sensor applications |
2 |
0 |
2 |
2 shifts (1 run) of LE approved. SHI (HE) not approved. Low energy ion species not mentioned in BTR-3 |
| 322 |
68310 |
68 |
3 |
MS |
Dr. Dillip K. Pradhan |
Structural Phase Transitions induced by Swift Heavy Ion Irradiations in Lead Free Ferroelectric Perovskite Oxides |
3 |
3 |
0 |
3 shifts (1 run) approved. |
| 323 |
68308 |
68 |
3 |
MS |
Dr. Rajesh Kumar |
Synthesis and SHI Beam Induced Modifications of MoS2 Nanostructures Thin Films for Potential Applications |
3 |
0 |
3 |
3 shifts (1 run)approved. |
| 324 |
68307 |
68 |
3 |
LEIBF |
Dr. Vineet Kumar Singh |
Oxygen ion implantation for the tailoring of V2Ox thin film work function for solar cell application |
6 |
0 |
6 |
Only LEIBF 6 shifts (1 run) approved. |
| 325 |
68306 |
68 |
3 |
NP |
DR.MOHAMED MUSTHAFA.M |
Pre-equilibrium neutron emission at high excitation energies and validation with nuclear reaction models |
15 |
15 |
0 |
One system sanctioned. 15 shifts approved. |
| 326 |
68301 |
68 |
3 |
MS |
Dr. Rahul Singhal |
SHI induced modifications of metal-carbon nanocomposite thin films |
3 |
3 |
0 |
3 shifts approved. |
| 327 |
68217 |
68 |
2 |
MS |
Ms Lolly Maria Joes |
Structural and Optical Characterization of Transition Metal Oxide Nanostructures and Thin Films for Photocatalytic and Solar Cell Applications |
3 |
3 |
0 |
6 shifts of LE and 3 shifts of HE approved. C/O Dr. ARUN ARAVIND |
| 328 |
68207 |
68 |
2 |
NP |
Atreyee Dey |
Search for triaxiality in Xenon isotopes of mass region A~ 125 |
30 |
0 |
30 |
15+15 shifts approved. c/o AJAY KUMAR SINGH |
| 329 |
68206 |
68 |
2 |
MS |
Reena Dhyani |
Effect of ion irradiation on structural electrical and magnetic properties of CoxCu1-xFe2O4 / Polypyrrole nano-composite |
6 |
3 |
3 |
3+3 shifts approved. |
| 330 |
68137 |
68 |
1 |
MS |
Sudipta Bhattacharya |
Effect of Swift Heavy Ion Irradiation on the Electrical Properties of Wide Bandgap Semiconductor Schotky Barrier Diodes |
3 |
0 |
3 |
3 shifts (1 run) of SHI approved. |
