Research Areas

Study of the properties of METAL-GaN semiconductor interface schottky contacts under swift heavy ions

Start Date
End Date
Shifts
3
Facility
MS
LEC
KA
Auc id
53107
Btr No
1
Pi
Prof. J.V.V.N. Kesava Rao S.K. University Andhra Pradesh
Topic
Study of the properties of METAL-GaN semiconductor interface schottky contacts under swift heavy ions
Ion
Nickel
Energy
150
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